The heterojunction formed at the amorphous/crystalline silicon (a-Si:H/c-Si) interface has unique electronic properties and can be used in silicon heterojunction (SHJ) solar cells. The combination of ultra-thin a-Si:H passivation layer achieves a high open circuit voltage (Voc) of 750 mV. In addition, n-type or p-type doped a-Si:H contact layers can crystallize into mixed phases, mitigating parasitic absorption, and improving carrier selectivity and collection efficiency.
Longi Green Energy Technology Co., Ltd. Xu Xixiang, Li Zhenguo and others realized SHJ solar cells with an efficiency of 26.6% on p-type silicon wafers. The authors adopted a phosphorus diffusion gettering pretreatment strategy on the wafer and used carrier-selective contact with nanocrystalline silicon (nc-Si:H) to significantly increase the efficiency of p-type SHJ solar cells to 26.56%. Establishes a new performance benchmark for p-type silicon solar cells.
The author details the process development and optoelectronic performance improvements of the device. Finally, the authors conduct power loss analysis to determine the future development path of p-type SHJ solar cell technology.
Xiaoning Ru et.al Silicon heterojunction solar cells achieving 26.6% efficiency on commercial-size p-type silicon wafer Joule 2024
DOI: 10.1016/j.joule.2024.01.015
https://doi.org/10.1016/j.joule.2024.01.015