In view of this, Tze Chien Sum and others from Nanyang Technological University studied the Cs0.05FA0.5MA0.45Pb0.5Sn0.5I3 system and demonstrated the very low 2Eg threshold (~500 nm) and high efficiency (99.4± 0.4%).
The strong multiplication effect can produce internal quantum efficiencies exceeding 110%, and in the best devices the internal quantum efficiency is even as high as 160%. The results of this study help to understand the contribution of the multiplied carrier effect to perovskite solar cells and the influence of various factors (optical loss and parasitic absorption loss, carrier recombination loss, carrier extraction loss).
The multiplier carrier effect exists in Pb-Sn hybrid perovskite solar cells, but the role of multiplier carriers may be suppressed. The author believes that by designing the device structure, perovskite solar cells can be adjusted to better express the carrier multiplication effect.
Yue Wang, Senyun Ye, Jia Wei Melvin Lim, David Giovanni, Minjun Feng, Jianhui Fu, Harish N S Krishnamoorthy, Qiannan Zhang, Qiang Xu, Rui Cai & Tze Chien Sum, Carrier multiplication in perovskite solar cells with internal quantum efficiency exceeding 100%. Nat Commun 14, 6293 (2023)
DOI: 10.1038/s41467-023-41758-w
https://www.nature.com/articles/s41467-023-41758-w