The authors improved the efficiency of back-junction SHJ solar cells through an improved back contact consisting of p-type doped nanocrystalline silicon and a transparent conducting oxide with low sheet resistance. The authors analyze the electrical properties of hole-selective contacts and compare them with p-type doped amorphous silicon contacts.
Furthermore, the authors achieved improved charge carrier transport properties and low contact resistivity (<5 mΩ cm2). Finally, by testing on industrial-grade silicon wafers (274 cm2, M6 size), the authors report a range of certified power conversion efficiencies.
Hao Lin et.al Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers Nature Energy 2023
DOI: 10.1038/s41560-023-01255-2
https://doi.org/10.1038/s41560-023-01255-2