The main performance limitation of inverted perovskite solar cells is the interface between the fullerene-based electron transport layer and the perovskite . EPFL's Kerem Artuk and Christian M. Wolff et al. develop atomic layer deposited thin AlOX interlayers that reduce nonradiative recombination at the perovskite/C60 interface, thereby increasing open circuit voltage by more than 60 mV and improving power conversion efficiency. An absolute improvement of 1%.
Surface-sensitive properties indicate the presence of a thin, conformally deposited AlOx layer that acts to passivate the contact. Different lead halide absorbers with different compositions are commonly used in these interlayers, where 1.55 eV bandgap single-junction devices can achieve power conversion efficiencies in excess of 23%.
The study found that the reduction and dense layer of metallic Pb0 can prevent the entry and exit of volatile substances and synergistically improve stability. AlOX-modified wide-bandgap perovskite absorber as top cell in monolithic perovskite
K. Artuk, D. Turkay, MD Mensi, JA Steele, DA Jacobs, M. Othman, X. Yu Chin, S.-J. Moon, AN Tiwari, A. Hessler-Wyser, Q. Jeangros, C. Ballif, CM Wolff, A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells And Perovskite-Silicon Tandems. Adv. Mater. 2024, 2311745.
https://doi.org/10.1002/adma.202311745
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